Schottky barrier diodes (SBDs) have been fabricated laterally on a β -Ga 2 O 3 film grown on both p-type and n-type Si (100) substrates using a pulsed laser deposition technique. The sample of Ga 2 O 3 on p-Si was further annealed at 600 °C to optimize device performance. Platinum (Pt) and Titanium (Ti)/Gold (Au) metal stacks have been utilized for the formation of Schottky and Ohmic contact on the Ga 2 O 3 , respectively. Considerably high breakdown voltages (V BR ) of 190, and 172 V and a significantly low on-resistance ( R on ) of 330, and 15 mΩ.cm 2 , have been obtained for the as-deposited sample and sample annealed at 600 °C, respectively for lateral Ga 2 O 3 /p-Si SBDs. Moreover, a much lower V BR of 56 V and higher on-resistance of 970 mΩ.cm 2 have been measured for Ga 2 O 3 /n-Si SBDs as compared to the Ga 2 O

中文翻译：

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使用减少的Surface场增强基于Si（100）的肖特基势垒二极管上β-Ga 2 O 3的性能

已经使用脉冲激光沉积技术在生长在p型和n型Si（100）衬底上的β-Ga 2 O 3膜上横向制造了肖特基势垒二极管（SBD）。将p-Si上的Ga 2 O 3样品在600°C下进一步退火以优化器件性能。铂（Pt）和钛（Ti）/金（Au）金属堆栈已分别用于在Ga 2 O 3上形成肖特基和欧姆接触。对于刚沉积的样品和在600°退火的样品，已经获得了190和172 V的相当高的击穿电压（V BR）和330和15mΩ.cm2的非常低的导通电阻（R on）。 C分别用于横向Ga 2 O 3 / p-Si SBD。此外，与Ga 2 O相比，Ga 2 O 3 / n-Si SBD的V BR更低，为56 V，更高的导通电阻为970mΩ.cm2。