Titanium-doped SnSb₄ phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use. The crystallization temperature, amorphous/crystalline resistance, and data retention of the SnSb₄ thin film can be significantly enhanced by doping with titanium, improving the thermal stability of the amorphous state and reducing power consumption. The effect of titanium doping on electrical transport in the thin film was explored using the Hall system. X-ray diffraction and transmission electron microscopy confirmed that the grain size of the thin film was reduced as the titanium content was increased. Grain refinement improved the density changes of the thin films before and after the phase transition. The consequent change in chemical bonding states after adding titanium indicated that Ti was bonded to Sb in the SnSb₄ lattice structure, wrapping around the Sb grains in an amorphous state. PCRAM cells based on Ti_0.10SnSb₄ thin film can be realized with a whole operation window by a 50 ns width pulse, and the operating power consumption was lower than that of a Ge₂Sb₂Te₅ (GST) PCRAM cell of similar dimensions.

中文翻译：

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钛对相变存储应用中SnSb4薄膜相变特性的优化作用

钛掺杂的SnSb ₄相变薄膜已通过实验研究用于相变随机存取存储器（PCRAM）。SnSb ₄的结晶温度，非晶/结晶电阻和数据保留通过掺杂钛，改善非晶态的热稳定性并降低功耗，可以显着增强薄膜。使用霍尔系统研究了钛掺杂对薄膜中电传输的影响。X射线衍射和透射电子显微镜证实，随着钛含量的增加，薄膜的晶粒尺寸减小。晶粒细化改善了相变前后薄膜的密度变化。添加钛后化学键合状态的变化表明，Ti以SnSb ₄晶格结构键合到Sb ，以非晶态包裹在Sb晶粒周围。基于Ti _0.10 SnSb _4的PCRAM单元通过50 ns宽度的脉冲，可以在整个工作窗口内实现薄膜化，并且其工作功耗比类似尺寸的Ge ₂ Sb ₂ Te ₅（GST）PCRAM单元要低。