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Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications.
Optics Express ( IF 3.8 ) Pub Date : 2020-07-02 , DOI: 10.1364/oe.395796
Jeroen Goyvaerts , Sulakshna Kumari , Sarah Uvin , Jing Zhang , Roel Baets , Agnieszka Gocalinska , Emanuele Pelucchi , Brian Corbett , Günther Roelkens

We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.

中文翻译:

GaAs引脚光电二极管在氮化硅波导上的转移打印集成,可用于近红外应用。

我们通过转移印刷通过在氮化硅光栅耦合器(GCs)顶部集成GaAs引脚光电二极管(PDs)展示了波导-检测器耦合。展示了单个设备和阵列打印。光电二极管在2V反向偏置下表现出低于20 pA的暗电流和高达0.30 A / W的波导参考响应度,对应于860 nm处47%的外部量子效率。我们已将检测器集成在10通道的片上阵列波导光栅(AWG)光谱仪的顶部,该光谱仪是由可商用的imec BioPIX-300 nm平台制造的。
更新日期:2020-07-06
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