Abstract Molecular Beam Epitaxy (MBE) was used to grow GaSb thin films on GaSb substrates. We have obtained the optimized growth condition to improve films quality and the surface morphology of GaSb epilayer during growth. Two group samples were tested to study the influence of the growth rate and the V/III flux ratios on the crystal quality. It caused fewer defects when the growth rate of approximately was fixed 0.6 ML/s. And the surface morphology and performance was best for GaSb epilayer when the beam ratio was 5. The thin films were characterized by Atomic Force Microscopy (AFM) and high-resolution X-Ray Diffraction (XRD). The root means square roughness of the superlattice surface was only 0.335 nm. The full width at half maximum of the rocking curve was 39.6 arcsec and the emission wavelength of photoluminescence was 1.99 μm.

中文翻译：

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GaSb 薄膜的同质外延和分子束外延表征

摘要 采用分子束外延 (MBE) 在 GaSb 衬底上生长 GaSb 薄膜。我们已经获得了优化的生长条件，以提高薄膜质量和生长过程中 GaSb 外延层的表面形貌。测试两组样品以研究生长速率和V/III通量比对晶体质量的影响。当大约 的增长率固定为 0.6 ML/s 时，它引起的缺陷较少。当光束比为5时，GaSb外延层的表面形貌和性能最好。薄膜通过原子力显微镜（AFM）和高分辨率X射线衍射（XRD）表征。超晶格表面的均方根粗糙度仅为 0.335 nm。摇摆曲线的半峰全宽为39.6弧秒，光致发光的发射波长为1.99μm。