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Magnetoresistance Effects in the Metallic AntiferromagnetMn2Au
Physical Review Applied ( IF 4.6 ) Pub Date : 2020-07-01 , DOI: 10.1103/physrevapplied.14.014004
S. Yu. Bodnar , Y. Skourski , O. Gomonay , J. Sinova , M. Kläui , M. Jourdan

In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the Néel vector. We investigate the magnetoresistance effects resulting from magnetic-field-induced reorientations of the staggered magnetization of epitaxial antiferromagnetic Mn2Au(001) thin films. The samples are exposed to 60-T magnetic field pulses along different crystallographic in-plane directions of Mn2Au(001), while their resistance is measured. For the staggered magnetization aligned via a spin-flop transition parallel to the easy [110] direction, an anisotropic magnetoresistance of 0.15% is measured. In the case of a forced alignment of the staggered magnetization parallel to the hard [100] direction, evidence for a larger anisotropic magnetoresistance effect is found. Furthermore, transient resistance reductions of 1% are observed, which we associate with the annihilation of antiferromagnetic domain walls by the magnetic field pulses.

中文翻译:

金属反铁磁体Mn2Au中的磁阻效应

在反铁磁自旋电子学中,必须将纯磁源的电阻修改与旨在切换Néel矢量的电流脉冲所产生的其他影响分开。我们研究了由磁场引起的外延反铁磁交错磁化方向的磁阻效应2001薄膜。样品沿不同的晶体平面内方向暴露于60-T磁场脉冲2001,同时测量其电阻。对于通过平行于易[110]方向的自旋跃迁过渡对准的交错磁化强度,各向异性磁阻为-0.15被测量。在平行于硬[100]方向强制排列交错磁化强度的情况下,发现了较大的各向异性磁阻效应的证据。此外,瞬态电阻降低了1个 观察到,这与通过磁场脉冲消除反铁磁畴壁有关。
更新日期:2020-07-01
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