The LiFi enabled smart street lighting system requires the adaptive SoC to save huge amount of power/energy for data storage, which plays an important role for any urban area development. For the above application, an energy‐efficient data‐dependent power supplied 10T SRAM cell with half‐select free read‐decoupled circuit is designed to boost stability while stacking effect controls the leakage current against the process‐voltage‐temperature variations. CMOS 65 nm technology node is used for the implementation and comparison of various SRAM cells. The proposed cell offers 4×, 1.15×, and 1.66× higher read, hold, and write stability, respectively, as compared with the 6T cell at 0.4 V supply voltage. The improvement of write, read, and leakage power of the proposed 10T cell are 98.03%, 56.25%, and 91.07%, respectively, as compared with the 6T cell at 0.2 V supply. It is also observed that the proposed 10T cell has 88.88% and 85.71% write 0 and write 1 energy, respectively, as compared with the 6T cell at 0.2 V supply voltage. To better assess the cell, we introduced the figure of merit (FOM) and observed that the FOM of the proposed cell is 125× higher as compared with the 6T cell at 0.4 V supply voltage.

中文翻译：

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节能数据相关的低功耗10T SRAM单元设计，用于支持LiFi的智能路灯系统应用

支持LiFi的智能路灯系统需要自适应SoC来节省用于数据存储的大量电能/能源，这对于任何市区的发展都起着重要作用。对于上述应用，设计了具有数据效率的电源供电的10T SRAM单元，具有半选择的自由读取去耦电路，可提高稳定性，同时堆叠效应可控制泄漏电流与过程电压-温度变化的关系。CMOS 65 nm技术节点用于各种SRAM单元的实现和比较。与在0.4 V电源电压下的6T电池相比，该电池的读取，保持和写入稳定性分别提高了4倍，1.15倍和1.66倍。建议的10T单元的写入，读取和泄漏功率分别提高了98.03％，56.25％和91.07％，与采用0.2 V电源的6T电池相比。还观察到，与在0.2V电源电压下的6T电池相比，所提出的10T电池分别具有88.88％和85.71％的写入0和写入1的能量。为了更好地评估电池，我们引入了品质因数（FOM），并观察到在0.4 V电源电压下，与6T电池相比，该电池的FOM高125倍。