An on‐chip polarized light source is desirable in signal processing, optical communication, and display applications. Layered semiconductors with reduced in‐plane symmetry have inherent anisotropic excitons that are attractive candidates as polarized dipole emitters. Herein, the demonstration of polarized light‐emitting diode based on anisotropic excitons in few‐layer ReS₂, a 2D semiconductor with excitonic transition energy of 1.5–1.6 eV, is reported. The light‐emitting device is based on minority carrier (hole) injection into n‐type ReS₂ through a hexagonal boron nitride (hBN) tunnel barrier in a metal–insulator–semiconductor (MIS) van der Waals heterostack. Two distinct emission peaks from excitons are observed at near‐infrared wavelength regime from few‐layer ReS₂. The emissions exhibit a degree of polarization of 80% reflecting the nearly 1D nature of excitons in ReS₂.

中文翻译：

---

多层ReS2中基于各向异性激子的偏振发光二极管。

在信号处理，光通信和显示应用中，需要片上偏振光源。平面内对称性降低的层状半导体具有固有的各向异性激子，是极化偶极子发射极的诱人候选物。在此，报告了在几层ReS ₂（激子跃迁能量为1.5-1.6 eV的二维半导体）中基于各向异性激子的极化发光二极管的演示。该发光器件基于少数载流子（空穴）通过金属-绝缘体-半导体（MIS）范德华异质堆叠中的六方氮化硼（hBN）隧道势垒注入n型ReS _2中。在几层ReS _2的近红外波长范围内观察到了激子的两个不同发射峰。发射的极化度为80％，反映了ReS ₂中激子的近一维性质。