Abstract Wireless power harvesting technology can convert RF energy into DC energy, but the main RF energy density in the environment is relatively low. Therefore, in order to improve the rectification efficiency of the transmission system under 2.45 GHz relatively weak energy density, this paper studies the influencing factors of rectification efficiency. Based on device optimization, a silicon layer combination contact GeSn Schottky diode structure for 2.45G relatively weak energy harvesting is proposed in this paper, which is simulated and verified using Silvaco and ADS simulation tools. The results show that the current responsivity and the turn-on voltage of GeSn Schottky diode with Si layer is about 21.5 A W−1 and 0.18 V, respectively. Under the condition of 2.45 GHz and −10 dBm relatively weak energy density, its rectification efficiency is about 10%, and when the input energy is 0 dBm, its rectification efficiency can reach 40%, twice that of ordinary Ge Schottky diodes.

中文翻译：

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用于相对弱能量无线采集的高整流效率肖特基二极管研究

摘要 无线电能收集技术可以将射频能量转化为直流能量，但环境中主要的射频能量密度相对较低。因此，为了提高2.45GHz能量密度相对较弱的传输系统的整流效率，本文研究了整流效率的影响因素。在器件优化的基础上，本文提出了一种用于2.45G相对弱能量收集的硅层组合接触GeSn肖特基二极管结构，并使用Silvaco和ADS仿真工具对其进行了仿真验证。结果表明，具有Si层的GeSn肖特基二极管的电流响应度和导通电压分别约为21.5 A W-1和0.18 V。在2.45 GHz和-10 dBm能量密度相对较弱的条件下，