Silicon is extensively researched as an substitute for carbon as the anode material in Li-ion batteries. However, the cycle life of Si is very short because of its high volume expansion. Herein, we propose SiN_x deposited by radio frequency reactive sputtering at room temperature as an anode material. Sputtering presents the advantage of being easily applicable to fabricate all-solid-state thin film batteries. In this study, we use a Si target and explore the deposition conditions, and the compositions of the SiN_x thin film are confirmed by X-ray photoelectron spectroscopy analysis. The SiN_0.85 thin film shows an initial discharge capacity of 1018 mAh g⁻¹ and capacity retention of 95.4% after 100 cycles, thus exhibiting stable performance. In addition, the transmittance of the SiN_0.85 thin film on the glass substrate is 88% in the visible region (400–800 nm). Meanwhile, on the transparent conducting electrode, the transmittance before and after lithiation is 80% and 55% in the visible region, respectively. These results demonstrate that the SiN_0.85 thin film, which can be used as the anode of transparent thin-film batteries, can be fabricated using reactive RF magnetron sputtering at room temperature.

硅已被广泛研究以替代碳作为锂离子电池的负极材料。然而，由于硅的高体积膨胀，其循环寿命非常短。在此，我们提出在室温下通过射频反应溅射沉积的SiN _x作为阳极材料。溅射具有易于应用于制造全固态薄膜电池的优点。在这项研究中，我们使用Si靶并探索沉积条件，并通过X射线光电子能谱分析确定了SiN _x薄膜的组成。SiN _0.85薄膜的初始放电容量为1018 mAh g ^-1100次循环后容量保持率为95.4％，因此表现出稳定的性能。另外，玻璃基板上的SiN _0.85薄膜在可见光区域（400-800 nm）的透射率为88％。同时，在透明导电电极上，在可见区域中，在锂化之前和之后的透射率分别为80％和55％。这些结果表明，可以在室温下使用反应性射频磁控溅射来制造可用作透明薄膜电池阳极的SiN _0.85薄膜。