Investigating highly efficient narrow-band emission phosphors that have strong excitation bands in the near-ultraviolet (NUV) region is the main goal of the present light-emitting diode (LED) research, especially for Bi³⁺-activated phosphors. The naked 6s and 6p electrons of Bi³⁺ are sensitive to the microenvironment, thus leading to broad emission bands, while most Bi³⁺-activated phosphors suffer from low absorption of NUV-LED chips. Here, we report on a narrow-band blue-emitting garnet-type phosphor of Sr₃Lu₂Ge₃O₁₂: Bi³⁺ that is available for NUV-LED chips; its full width of the half maximum (FWHM) is limited to 40 nm, which is comparative to rare earth-activated phosphors, such as commercial blue phosphor BaMgAl₁₀O₁₇: Eu²⁺ (FWHM ≈ 52 nm), and this phenomenon is extremely rare among most Bi³⁺-activated phosphors. The internal quantum efficiency (IQE) of Sr₃Lu₂Ge₃O₁₂: Bi³⁺ can reach 57%. Moreover, it is interesting to find that Sr₃Lu₂Ge₃O₁₂: Bi³⁺ also exhibits exalting cathodoluminescence properties and its narrow-band emission produces brilliant images with high color saturation. The significant luminescent properties of trivalent bismuth are ascribed to the compact and highly symmetrical crystal structure of Sr₃Lu₂Ge₃O₁₂; thus, the discussion of the structure-property relations for Bi³⁺-activated Sr₃Lu₂Ge₃O₁₂ is the most anticipated part of this work. The results pave the way for the design of better Bi³⁺-activated phosphors for use as white light emitting diodes (WLEDs) and field emission displays (FEDs).

研究在近紫外（NUV）区域中具有强激发带的高效窄带发射磷光体是当前发光二极管（LED）研究的主要目标，特别是对于Bi ³⁺激活的磷光体。Bi ³⁺的裸露6s和6p电子对微环境敏感，因此导致宽的发射带，而大多数Bi ³⁺活化的磷光体吸收的NUV-LED芯片吸收率低。在这里，我们报道了一种Sr ₃ Lu ₂ Ge ₃ O ₁₂：Bi ³⁺的窄带发蓝光石榴石型荧光粉。可用于NUV-LED芯片；其半峰全宽（FWHM）限制为40 nm，这与稀土激活的磷光体（例如商用蓝色磷光体BaMgAl ₁₀ O ₁₇：Eu ²⁺（FWHM≈52 nm））相比是比较大的。在大多数Bi ³⁺活化的荧光粉中极为罕见。Sr ₃ Lu ₂ Ge ₃ O ₁₂：Bi ³⁺的内部量子效率（IQE）可以达到57％。此外，有趣的是发现Sr ₃ Lu ₂ Ge ₃ O ₁₂：Bi ³⁺它还具有显着的阴极发光特性，其窄带发射可产生具有高色彩饱和度的明亮图像。三价铋的显着发光特性归因于Sr ₃ Lu ₂ Ge ₃ O ₁₂的致密且高度对称的晶体结构。因此，Bi ³⁺活化的Sr ₃ Lu ₂ Ge ₃ O ₁₂的结构-性质关系的讨论是这项工作最令人期待的部分。结果为更好的Bi ³⁺活化荧光粉的设计铺平了道路，该荧光粉可用作白光发光二极管（WLED）和场发射显示器（FED）。