CdS/CdSe quantum dot sensitized solar cells (QDSSC) fabricated by successive ionic layer adsorption and reaction (SILAR) processes was investigated, and a rate-equation model for the trapinduced power conversion efficiency (PCE) limit was developed and used to explain the experimental results. The cascade structure with a CdS:CdSe (7:7) cycle ratio showed the highest PCE of 2.55%. However, excess cycles of CdSe beyond the optimum condition decrease the device performance. The current loss when exceeding the maximum PCE condition is attributed to the trap-induced charge field that impedes the carrier extraction from the absorber layer to the titanium dioxide (TiO2) and increases recombination due to dislocation generation when the critical thickness for pseudomorphic growth is exceeded. The simulation results show that the increase in the number of dislocations beyond the critical thickness increases the recombination rate and impedes charge transfer at the interface between TiO2 and the QDs.

中文翻译：

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使用连续离子层吸附和反应过程制造的 CdS/CdSe 级联量子点敏化太阳能电池的陷阱诱导功率转换极限的研究

研究了通过连续离子层吸附和反应 (SILAR) 工艺制造的 CdS/CdSe 量子点敏化太阳能电池 (QDSSC)，并开发了陷阱诱导功率转换效率 (PCE) 极限的速率方程模型并用于解释实验结果。具有 CdS:CdSe (7:7) 循环比的级联结构显示出最高的 PCE，为 2.55%。然而，超出最佳条件的 CdSe 循环过多会降低器件性能。超过最大 PCE 条件时的电流损失归因于陷阱诱导的电荷场，该电荷场阻碍载流子从吸收层提取到二氧化钛 (TiO2) 并在超过假晶生长的临界厚度时由于位错产生而增加复合.