The work is devoted to the problem of crack formation in thin sublayers of silicon oxide during pulsed heating of interconnects on single-crystal silicon wafers. It was shown that the passage of current pulses with an amplitude of up to 8 × 10¹⁰ A/m² and a duration of up to 500 μs leads to thermal destruction of the interconnects and contributes to the formation of microcracks in SiO₂ films along the metallization path. The magnitude of the mechanical stresses arising in the structure during thermal shock is estimated. It is shown that in contrast to SiO₂ films, the level of mechanical stresses in silicon is insufficient for cracking near the source of thermal shock. It was also found that the nature of cracking in a dielectric film depends on the quality of the deposition of the dielectric film and the metal film, as well as the state of the dielectric-metal interface.

该工作致力于在单晶硅晶片上互连的脉冲加热期间在氧化硅薄子层中形成裂纹的问题。结果表明，与最多的振幅电流脉冲的通道，以8×10 ¹⁰  /米²和至多500的持续时间 μ小号通向互连和有助于的热破坏以SiO微裂纹的形成_2层膜沿着金属化路径。估计在热冲击过程中在结构中产生的机械应力的大小。结果表明，与SiO ₂相反薄膜中，硅中的机械应力水平不足以在热冲击源附近产生裂纹。还发现介电膜中裂纹的性质取决于介电膜和金属膜的沉积质量以及介电-金属界面的状态。