SiO x with various oxygen contents were synthesized from Si powder by a simple room-temperature ball milling method by controlling the air exposure time during milling. The resulting SiO x consists of nano and amorphous Si dispersed in an amorphous silicon oxide matrix. The oxygen saturated composition of SiO 0.37 is thermally stable up to 800 °C and has improved cycling performance after annealing. The 1st irreversible capacity is reduced by high temperature annealing due to defect healing, while the high reversible capacity (1500–2000 mAh g −1 or 1600–1800 Ah l −1 ) is well maintained. This work demonstrates the thermal properties of SiO x made by reactive gas milling and how internal defects directly influence its electrochemistry.

中文翻译：

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活性气体研磨制备SiO x的电化学和热行为

通过控制研磨过程中的空气暴露时间，通过简单的室温球磨法由Si粉合成具有各种含氧量的SiO x。所得的SiO x由分散在非晶氧化硅基质中的纳米和非晶Si组成。SiO 0.37的氧饱和成分在高达800°C的温度下具有热稳定性，并且在退火后具有改善的循环性能。由于缺陷修复，高温退火降低了第一不可逆容量，同时很好地保持了高可逆容量（1500–2000 mAh g -1或1600–1800 Ah l -1）。这项工作证明了反应性气体研磨制得的SiO x的热性能以及内部缺陷如何直接影响其电化学。