Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/ c -Al 2 O 3 templates. It is shown that these voids shape, due to a high lattice mismatch between InN and GaN materials, starts from the base and extends up to a half of the total length of the nanorods. When the effect of the mismatch between substrate and nanorods becomes weaker, the hollow nanotubes close up at the top and further growth proceeds in the standard nanowire geometry without voids. This effect is observed within a wide range of growth conditions during the InN synthesis and must be taken into account for controlling the final structure of InN nanorods for different device applications.

中文翻译：

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GaN模板上SiN x中InN纳米棒的选择性区域生长中形成空隙

提出了在图案化的GaN / c -Al 2 O 3模板上通过选择性区域氢化物气相外延生长的InN纳米棒中形成空隙的实验数据和支持模型。结果表明，由于InN和GaN材料之间的高度晶格失配，这些空隙形状从基底开始，一直延伸到纳米棒总长度的一半。当基材和纳米棒之间的不匹配作用变弱时，中空纳米管会在顶部闭合，并且在标准纳米线几何结构中会进一步生长而不会产生空隙。在InN合成过程中，会在各种生长条件下观察到这种效应，并且在控制InN纳米棒在不同器件应用中的最终结构时必须考虑到这一效应。