The influences of both high-voltage stress and hygrothermal stress were studied for homojunction and heterojunction crystalline Si photovoltaic (PV) modules. In order to separately access the influence of these stresses, these PV modules were subjected to sequential tests with hygrothermal stress and high-voltage stress for various stress durations of each test. It was found that for p-type homojunction crystalline Si PV modules hygrothermal stress applied in advance considerably enhances potential-induced degradation (PID) by high-voltage stress. High-voltage stress applied in advance also accelerates finger-electrode degradation by hygrothermal stress. It was also clarified that hygrothermal stress for short duration applied in advance considerably enhances PID by high-voltage stress for n-type heterojunction crystalline Si PV modules. The possible mechanisms for these accelerated degradation phenomena by the combined stresses are presented.

中文翻译：

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湿热应力对同质结和异质结晶体硅光伏组件电势降解的影响

研究了同质结和异质结晶体硅光伏（PV）组件的高压应力和湿热应力的影响。为了分别获得这些应力的影响，对这些PV组件进行了湿热应力和高压应力的顺序测试，每个测试持续时间各不相同。已发现，对于p型同质结晶体Si PV组件，预先施加的湿热应力会显着增强高压应力引起的电势退化（PID）。预先施加的高压应力还会由于湿热应力而加速指状电极的降解。还明确了，对于n型异质结结晶硅PV组件，预先施加的短期湿热应力会通过高压应力显着增强PID。