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Chemical Deposition of CdS Thin Films in the Hexagonal Phase without Annealing
Emerging Materials Research ( IF 2.2 ) Pub Date : 2020-06-24 , DOI: 19.00180
Metehan Önal, Barış Altıokka

CdS thin films were produced using the chemical bath deposition method with thiourea as the source of S. 2.4 mmol CdCl2, 0.15 mol KOH, and 0.16 mol NH4NO3 were dissolved in 100 ml deionized water. Thiourea was added to the final solution at intervals of zero, 1.5, three, six and nine minutes. The effects of delaying the addition of thiourea were investigated. The optical properties of CdS thin films were determined using an UV-Vis (Ultraviolet-visible spectroscopy machine). It was found that the band gaps of the films decreased as the delay time of adding thiourea was increased. Structural properties of the CdS thin films were obtained by X-ray diffraction (XRD). It was discovered that when the film was created with a delay time of six minutes, it had a hexagonal structure. Surface analysis of all the thin films was done with a scanning electron microscope (SEM). It was found that cracks and voids decreased as the delay time of the thiourea addition increased.

中文翻译:

六方相中CdS薄膜的化学沉积而无需退火

使用化学浴沉积方法,以硫脲作为S的源,制备CdS薄膜。将2.4 mmol CdCl2、0.15 mol KOH和0.16 mol NH4NO3溶解在100 ml去离子水中。将硫脲以零,1.5,三,六和九分钟的间隔添加到最终溶液中。研究了延缓硫脲添加的影响。CdS薄膜的光学性质是使用UV-Vis(紫外可见光谱仪)测定的。发现随着硫脲的添加延迟时间增加,膜的带隙减小。CdS薄膜的结构特性是通过X射线衍射(XRD)获得的。发现当以六分钟的延迟时间制作该膜时,它具有六边形结构。所有薄膜的表面分析均采用扫描电子显微镜(SEM)进行。发现裂纹和空隙随着硫脲添加延迟时间的增加而减少。
更新日期:2020-06-30
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