In this work, a two-terminal TiOx-based memristor device has been fabricated and the methods for controlling its conductance are demonstrated. The fabricated memristor device exhibits bipolar analog resistive-switching characteristics and the conductance margin over 10 fold between the highest and the lowest resistance states (RS). It is revealed that the conductance can be adjusted with high resolution by either continuous voltage sweep mode or pulse mode. In the former mode, the conductance is controlled as set/reset sweep stop voltages are changed by −0.2 V/ 0.2 V, respectively. In the latter method, the conductance is controlled by modulating the pulse width and amplitude. When the fabricated device is utilized as a synaptic device, consequently, the potentiation and depression operations start at voltages below −1.8 V and over 1.0 V, respectively. It has been found that the conductance changes and nonlinearity characteristics of weight update are tuned with various pulse widths and amplitudes. These results support that the fabricated memristor in a highly simple material configuration of Al/TiOx/Al can be a strong candidate for a synaptic device for the hardware-driven neuromorphic system as well as a novel nonvolatile memory device by the accurate conductance adjustability.

中文翻译：

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用于突触器件应用的 TiOx 忆阻器的制造和表征

在这项工作中，已经制造了一个基于二端 TiOx 的忆阻器器件，并展示了控制其电导的方法。制造的忆阻器器件表现出双极模拟电阻开关特性和最高和最低电阻状态 (RS) 之间超过 10 倍的电导裕度。结果表明，电导可以通过连续电压扫描模式或脉冲模式以高分辨率进行调节。在前一种模式中，当设置/重置扫描停止电压分别改变 -0.2 V/0.2 V 时，电导受到控制。在后一种方法中，通过调制脉冲宽度和幅度来控制电导。因此，当制造的器件用作突触器件时，增强和抑制操作开始于低于 -1.8 V 和超过 1.0 V 的电压，分别。已经发现，权重更新的电导变化和非线性特性可以通过各种脉冲宽度和幅度进行调整。这些结果表明，采用高度简单的 Al/TiOx/Al 材料配置制造的忆阻器可以成为硬件驱动神经形态系统的突触器件以及通过精确电导可调性的新型非易失性存储器件的有力候选者。