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Ballisticity Saturation by Unscalable Reflections
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-01-01 , DOI: 10.1109/led.2020.2993238
M Ali Pourghaderi , Hesameddin Ilatikhameneh , Anh-Tuan Pham , Hong-Hyun Park , Jinyoung Lim , Zhengping Jiang , Jing Wang , Seonghoon Jin , Jongchol Kim , Uihui Kwon , Won-Young Chung , Woosung Choi , Dae Sin Kim

The intrinsic limit on ballisticity of ultra-scaled transistors is investigated. A novel probing technique is presented, which locally resolves the loss of incident fluxes. This projection reveals the scalable and unscalable components of reflection. The poor ballisticity is explained by non-equilibrium distribution around the potential barrier, which triggers a substantial unscalable reflections.

中文翻译:

不可缩放反射的弹道饱和度

研究了超大规模晶体管弹道的内在限制。提出了一种新颖的探测技术,它可以局部解决入射通量的损失。该投影揭示了反射的可伸缩和不可伸缩组件。差的弹道性可以通过势垒周围的非平衡分布来解释,这会引发大量不可缩放的反射。
更新日期:2020-01-01
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