Models of threshold voltage and subthreshold slope (SS) for macaroni channel MOSFET are built for the first time based on the potential model in our previous work. These models clearly illustrate the variations of threshold voltage and subthreshold slope caused by short-channel-effects when changing gate length, silicon thickness, oxide thickness, channel doping concentration, and drain-to-source bias. The good agreements between simulations and models verified the validity of those models.

中文翻译：

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通心粉通道MOSFET的阈值电压和亚阈值斜率模型

通心粉通道MOSFET的阈值电压和亚阈值斜率（SS）模型是基于我们之前工作中的电位模型首次建立的。这些模型清楚地说明了在改变栅极长度、硅厚度、氧化物厚度、沟道掺杂浓度和漏源偏置时由短沟道效应引起的阈值电压和亚阈值斜率的变化。模拟和模型之间的良好一致性验证了这些模型的有效性。