In this letter, we report a large-area lateral AlGaN/GaN-on-Si power rectifier as diode with low turn-on voltage. The lateral field-effect rectifier (LFER) is based on a normally-off HEMT in reverse conduction with very low threshold-voltage and shorted gate-source terminal. A p-GaN gate module was used to realize the normally-off HEMT. The large-area LFER achieves a turn-on voltage of down to 0.2 V, a specific on-resistance of 10.8 $\text{m}\Omega \times {\mathrm {cm}}^{2}$ , a maximum current of above 9 A with a gate width of 87 mm, and a leakage current of $57~\mu \text{A}$ /mm at a blocking voltage of 500 V. Test structures exhibit a breakdown voltage of 676 V. The effect of different depletion zone lengths, temperature influences and distribution on the turn-on voltage are investigated. Finally, this work shows that this approach of a p-GaN LFER has a great potential for rectifiers for next-generation power electronics.

中文翻译：

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具有低导通电压的大面积横向 AlGaN/GaN-on-Si 场效应整流器

在这封信中，我们报告了一种大面积横向 AlGaN/GaN-on-Si 功率整流器作为具有低导通电压的二极管。横向场效应整流器 (LFER) 基于反向传导的常关 HEMT，具有非常低的阈值电压和短路的栅源极端子。p-GaN 栅极模块用于实现常关型 HEMT。大面积 LFER 实现低至 0.2 V 的导通电压，10.8 的特定导通电阻 $\text{m}\Omega \times {\mathrm {cm}}^{2}$ , 最大电流大于 9 A，栅极宽度为 87 mm，漏电流为 $57~\mu \text{A}$ /mm 在 500 V 的阻断电压下。测试结构表现出 676 V 的击穿电压。研究了不同耗尽区长度、温度影响和分布对导通电压的影响。最后，这项工作表明，这种 p-GaN LFER 方法对于下一代电力电子设备的整流器具有巨大的潜力。