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Self-Selective Resistive Device with Hybrid Switching Mode for Passive Crossbar Memory Application
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-07-01 , DOI: 10.1109/led.2020.2992680
Zongwei Wang , Jian Kang , Guandong Bai , Guofang Zhong , Bowen Wang , Yaotian Ling , Qingyu Chen , Lin Bao , Lindong Wu , Yimao Cai , John Robertson , Ru Huang

In this letter, we experimentally demonstrated a novel resistive device with a hybrid switching mode that can be alternated between volatile threshold switching and non-volatile resistive switching. The device consists of dual-functional layers VO2 /HfO2 sandwiched by symmetrical TiN electrodes. A >20 unified ratio for selectivity and memory window is obtained. Owing to the stable resistive behavior of HfO2 and insulator-metal transition of VO2, the device shows excellent uniform switching parameters in both switching modes with a high on-state current density (1E4 A/cm2) and fast switching/recovery speed (< 30 ns). This self-selective resistive memory is of great potential in the high-density crossbar array, particularly for the future 3D-Vertical resistive random access memory (RRAM) integration.

中文翻译:

用于无源交叉存储器应用的具有混合开关模式的自选电阻器件

在这封信中,我们通过实验展示了一种具有混合开关模式的新型电阻器件,可以在易失性阈值开关和非易失性电阻开关之间交替。该器件由夹在对称 TiN 电极之间的双功能层 VO2 /HfO2 组成。获得了选择性和记忆窗口的 >20 统一比率。由于 HfO2 的稳定电阻行为和 VO2 的绝缘体-金属转变,该器件在两种开关模式下都显示出优异的均匀开关参数,具有高通态电流密度 (1E4 A/cm2) 和快速开关/恢复速度 (< 30 ns)。这种自选择电阻式存储器在高密度交叉阵列中具有巨大潜力,特别是对于未来的 3D 垂直电阻式随机存取存储器 (RRAM) 集成。
更新日期:2020-07-01
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