We report La alloyed ${ZrO}_{x}$ high- ${k}$ gate insulator (GI) for $ZnO$ thin-film transistors (TFTs) by solution-process. The La concentration in ${ZrO}_{x}$ is varied from 0 to 7.5% for optimum device performance. The atomic force microscopy and X-ray photoelectron spectroscopy analysis of 5% La alloyed ${ZrO}_{x}$ GI show smooth surface with higher metal-oxide (M – O) bonds and reduced defect density in the bulk compared with pristine ${ZrO}_{x}$ . Therefore, $ZnO$ TFT using 5% La alloyed ${ZrO}_{x}$ GI exhibits hysteresis-free device performance, with saturation mobility of $11.58 {cm}^{2}/V\cdot s$ , $I_{ \mathrm{ON}}/I_{ \mathrm{OFF}}$ ratio of $2.67\times 10^{8}$ , threshold voltage of $1.25 V$ , and subthreshold swing of $249 mV/dec$ . We also achieve highly stable ZnO TFTs under positive bias stress using 5% La alloyed ${ZrO}_{x}$ GI.

中文翻译：

---

用于高性能 ZnO 薄膜晶体管的固溶处理 La 合金 ZrOx 高 k 电介质

我们报告 La 合金 ${ZrO}_{x}$ 高的- ${k}$ 栅极绝缘体 (GI) 用于 $氧化锌$ 薄膜晶体管 (TFT) 通过溶液工艺。La浓度在 ${ZrO}_{x}$ 从 0 到 7.5% 不等，以获得最佳设备性能。5% La合金的原子力显微镜和X射线光电子能谱分析 ${ZrO}_{x}$ 与原始相比，GI 显示出具有更高金属氧化物 (M – O) 键的光滑表面和更低的本体缺陷密度 ${ZrO}_{x}$ . 所以， $氧化锌$ TFT 使用 5% La 合金 ${ZrO}_{x}$ GI 表现出无滞后的器件性能，饱和迁移率为 $11.58 {cm}^{2}/V\cdot s$ , $I_{ \mathrm{ON}}/I_{ \mathrm{OFF}}$ 比率 $2.67\乘以 10^{8}$ , 阈值电压 $1.25 V$ ，和亚阈值摆动 $249 mV/dec$ . 我们还使用 5% La 合金在正偏置应力下实现了高度稳定的 ZnO TFT ${ZrO}_{x}$ 胃肠道。