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Analysis of Carrier Mobility in Amorphous Metal-Oxide Semiconductor Thin-Film Transistor using Hall Effect
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-01-01 , DOI: 10.1109/led.2020.2993268
Kota Imanishi , Tokiyoshi Matsuda , Mutsumi Kimura

Carrier mobility in an amorphous metal-oxide semiconductor (AOS) thin-film transistor (TFT) was analyzed using the Hall effect. First, an amorphous Ga-Sn-O (a-GTO) TFT and that with four electrodes arranged in a square shape are fabricated. Next, a transistor characteristic of the a-GTO TFT is measured, and field-effect mobility ( $\mu _{{\text {FE}}}$ ) is calculated. Moreover, the Hall effect of the a-GTO TFT with the four electrodes is measured using a van der Pauw method, and Hall mobility ( $\mu _{{\text {Hall}}}$ ) is calculated. Finally, it is found that the dependence of $\mu _{{\text {FE}}}$ on the gate voltage ( $\text{V}_{{\text {gs}}}$ ) is similar to that of $\mu _{{\text {Hall}}}$ , and the carrier mobility ( $\mu $ ) increases as Vgs increases. In conclusion, it is suggested that $\mu $ in the AOS TFT is strongly subject to the percolation path in the channel layer.

中文翻译:

使用霍尔效应分析非晶金属氧化物半导体薄膜晶体管中的载流子迁移率

使用霍尔效应分析非晶金属氧化物半导体 (AOS) 薄膜晶体管 (TFT) 中的载流子迁移率。首先,制造非晶Ga-Sn-O (a-GTO) TFT 和四个电极排列成正方形的TFT。接下来,测量a-GTO TFT的晶体管特性,以及场效应迁移率( $\mu _{{\text {FE}}}$ ) 计算。此外,使用范德堡方法测量具有四个电极的 a-GTO TFT 的霍尔效应,以及霍尔迁移率( $\mu _{{\text {Hall}}}$ ) 计算。最后发现依赖 $\mu _{{\text {FE}}}$ 栅极电压( $\text{V}_{{\text {gs}}}$ ) 类似于 $\mu _{{\text {Hall}}}$ , 和载流子迁移率 ( $\亩 $ ) 随着 V gs 的增加而增加。总之,建议 $\亩 $ AOS TFT 中的 TFT 强烈受到沟道层中的渗透路径的影响。
更新日期:2020-01-01
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