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ε-Ga2O3: A Promising Candidate for High-Electron-Mobility Transistors
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-01-01 , DOI: 10.1109/led.2020.2995446
Jin Wang , Hui Guo , Cheng-Zhang Zhu , Qing Cai , Guo-Feng Yang , Jun-Jun Xue , Dun-Jun Chen , Yi Tong , Bin Liu , Hai Lu , Rong Zhang , You-Dou Zheng

We predict spontaneous polarization of $\varepsilon $ -Ga2O3 can achieve a high density of 1014 cm−2 two-dimensional electron gas (2DEG) at the interface of $\varepsilon $ -Ga2O3 and ${m}$ -AlN ( ${m}$ -GaN) without doping. Based on the accurately calculated bandgap alignment of $\varepsilon $ -Ga2O3, AlN and GaN, we find that the critical thickness of the $\varepsilon $ -Ga2O3 to form a mobile 2DEG at the interface on ${m}$ -AlN and ${m}$ -GaN substrates is around 1.8 nm, which is much thinner than AlGaN due to its large potential shift. The depletion mode high-electron-mobility transistors (HEMTs) based on $\varepsilon $ -Ga2O3 are also investigated. The results show that the saturation currents of $\varepsilon $ -Ga2O3 HEMTs devices are much larger than that of typical AlGaN HEMTs. For the emerging problem of large leakage current from $\varepsilon $ -Ga2O3 HEMTs device, we present a novel method that can significantly suppress the off-state leakage current of the device by growing an ultrathin AlGaN layer on the top surface of $\varepsilon $ -Ga2O3. Therefore, our results can provide a theoretical basis for the potential applications of $\varepsilon $ -Ga2O3 in fabricating HEMTs for high-power and high-frequency applications.

中文翻译:

ε-Ga2O3:高电子迁移率晶体管的有希望的候选者

我们预测自发极化 $\varepsilon $ -Ga 2 O 3可以在界面处实现10 14 cm -2的高密度二维电子气(2DEG) $\varepsilon $ -Ga 2 O 3 ${m}$ -氮化铝( ${m}$ -GaN) 没有掺杂。基于精确计算的带隙排列 $\varepsilon $ -Ga 2 O 3、AlN 和 GaN,我们发现 $\varepsilon $ -Ga 2 O 3在界面上形成移动的 2DEG ${m}$ -AlN 和 ${m}$ -GaN 衬底大约为 1.8 nm,由于其较大的电位偏移,它比 AlGaN 薄得多。耗尽型高电子迁移率晶体管 (HEMT) $\varepsilon $ -Ga 2 O 3也被研究。结果表明,饱和电流为 $\varepsilon $ -Ga 2 O 3 HEMT 器件比典型的 AlGaN HEMT 器件大得多。针对新出现的大漏电流问题 $\varepsilon $ -Ga 2 O 3 HEMTs 器件,我们提出了一种新方法,通过在器件的顶面生长超薄 AlGaN 层,可以显着抑制器件的断态漏电流。 $\varepsilon $ -Ga 2 O 3。因此,我们的结果可以为潜在的应用提供理论基础。 $\varepsilon $ -Ga 2 O 3用于制造用于高功率和高频应用的 HEMT。
更新日期:2020-01-01
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