Indacenodithiophene-co-benzothiadiazole (ID T-BT), diketopyrrolopyrrole-thieno[3,2-b]thiophene (DPPT-TT), and poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4, 5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} (N2200) organic thin-film transistors (OTFTs) with a top-gate structure were patterned by simple oxygen plasma treatment instead of conventional processes such as photolithography and inkjet printing. The ungated layer, which is known to cause leakage current paths, was efficiently removed by oxygen plasma treatment. After patterning, the gate leakage current in OTFTs was suppressed below the order of 10⁻⁹ A, the on/off current ratio of DPPT-TT OTFTs increased from ${5}\times {10}^{{4}}$ to ${2}\times {10}^{{7}}$ , and the subthreshold swing extracted from N2200 OTFTs decreased from 1.6 to 0.3 V dec⁻¹. All the measured electrical parameters of the patterned OTFTs were distributed in narrower ranges than those of the corresponding non-patterned devices, indicating the high uniformity and reproducibility of the patterned OTFTs. Our low-cost and simple patterning method can be widely used to improve the electrical performance of OTFTs.

中文翻译：

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顶栅有机薄膜晶体管上的直接图案化：提高开/关比、亚阈值摆动和均匀性

茚二噻吩-共-苯并噻二唑 (ID T-BT)、二酮吡咯并吡咯-噻吩并 [3,2-b] 噻吩 (DPPT-TT) 和聚{[N,N'-双(2-辛基十二烷基)-萘-1,4 , 5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (N2200) 具有顶栅结构的有机薄膜晶体管 (OTFT)通过简单的氧等离子体处理而不是光刻和喷墨印刷等传统工艺进行图案化。已知会导致漏电流路径的非栅极层通过氧等离子体处理被有效去除。图案化后，OTFT 的栅极漏电流被抑制在 10 ^-9 A 以下，DPPT-TT OTFT 的开/关电流比从 ${5}\times {10}^{{4}}$ 至 ${2}\times {10}^{{7}}$ ，并且从 N2200 OTFT 提取的亚阈值摆幅从 1.6 V dec ^-1降低到 0.3 V dec ^-1。图案化 OTFT 的所有测量电参数分布在比相应的非图案化器件更窄的范围内，表明图案化 OTFT 的高均匀性和可重复性。我们的低成本和简单的图案化方法可广泛用于提高 OTFT 的电气性能。