In this letter, we report a stretchable HfO2-based resistive switching memory device utilizing the wavy structured strategy. The fabricated Cu/HfO2/Au device shows reliable and reversible resistive switching behaviors up to a stretching strain of 20%. After being released, the reproducible memory characteristics of the device can still be maintained. The statistical resistive switching parameters under various stretching strains in the range from 0% to 20% are counted, which exhibit a large OFF/ON resistance ratio (103), low operation voltage (2 V), good endurance and retention (104s), demonstrating the good and reliable stretchable memory characteristics. Moreover, the device-to-device distributions are carried out in these stretched states, further validating the device robustness on stretching strains. Our results show a promising approach to achieve the stretchable memory by rendering inorganic-based resistive switching devices with the wavy structure, which extends rigid and brittle memory towards future highly flexible, even stretchable data storage and computing.

中文翻译：

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使用波浪结构设计的可拉伸基于 HfO2 的电阻式开关存储器

在这封信中，我们报告了一种利用波浪结构策略的可拉伸的基于 HfO2 的电阻开关存储器件。制造的 Cu/HfO2/Au 器件在高达 20% 的拉伸应变下显示出可靠且可逆的电阻切换行为。被释放后，设备的可再现存储特性仍然可以保持。统计了0%~20%范围内各种拉伸应变下的统计电阻开关参数，表现出较大的OFF/ON电阻比（103），低工作电压（2V），良好的耐久性和保持性（104s），展示了良好且可靠的可拉伸记忆特性。此外，器件到器件的分布是在这些拉伸状态下进行的，进一步验证了器件对拉伸应变的鲁棒性。