Piezoelectric materials with inherent mechanical-electric coupling effect are a crucial family of functional materials in high-end information technology. For practical applications, the transverse piezoelectric performance (d31 or d32) is mainly considered, because this parameter is a vitally important index to characterize the performance of piezoelectric thin films. However, the transverse piezoelectricity of the thin films as a key figure of merit is seldom mentioned in molecular ferroelectrics. Herein, we report that a new one-dimensional halide perovskite ferroelectric N,N-dimethylallylammoniumCdCl3 (DMAACdCl3) exhibits an above room-temperature ferroelectric phase transition with a saturated polarization of 1.9 μC cm-2 and a coercive field of 5.0 kV cm-1. The thin film of DMAACdCl3 is successfully fabricated using an easy processing spinning method and maintains well ferroelectric properties verified by piezoresponse force microscopy (PFM). More Significantly, the ferroelectric thin film offers superior transverse piezoelectricity with an in-plane piezoelectric response of about 41 pC N-1, which is about twice that of well-known piezoelectric polymer PVDF (21 pC N-1). Transverse piezoelectricity has been scarcely studied in molecular ferroelectrics and its exploitation would play an important role in the design of next-generation smart piezoelectric devices.

中文翻译：

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卤化物钙钛矿分子铁电薄膜中的优异横向压电性

具有固有机电耦合效应的压电材料是高端信息技术中至关重要的功能材料家族。对于实际应用，主要考虑横向压电性能（d31 或 d32），因为该参数是表征压电薄膜性能的至关重要的指标。然而，作为关键品质因数的薄膜横向压电性在分子铁电体中很少被提及。在此，我们报告了一种新的一维卤化物钙钛矿铁电 N,N-二甲基烯丙基铵 CdCl3 (DMAACdCl3) 表现出高于室温的铁电相变，饱和极化为 1.9 μC cm-2，矫顽场为 5.0 kV cm-1 . DMAACdCl3 薄膜是使用易于加工的纺丝方法成功制造的，并通过压电响应力显微镜 (PFM) 验证保持良好的铁电性能。更重要的是，铁电薄膜具有出色的横向压电性能，面内压电响应约为 41 pC N-1，约为众所周知的压电聚合物 PVDF (21 pC N-1) 的两倍。横向压电在分子铁电体中的研究很少，其开发将在下一代智能压电器件的设计中发挥重要作用。铁电薄膜提供卓越的横向压电性能，面内压电响应约为 41 pC N-1，大约是众所周知的压电聚合物 PVDF (21 pC N-1) 的两倍。横向压电在分子铁电体中的研究很少，其开发将在下一代智能压电器件的设计中发挥重要作用。铁电薄膜提供卓越的横向压电性能，面内压电响应约为 41 pC N-1，大约是众所周知的压电聚合物 PVDF (21 pC N-1) 的两倍。横向压电在分子铁电体中的研究很少，其开发将在下一代智能压电器件的设计中发挥重要作用。