Ultra-compact mode-order converters with dielectric slots are demonstrated on a silicon-on-insulator platform. We propose a mode converter that converts the TE0 mode into the TE1 mode with an ultra-small footprint of only ${0.8} \times {1.2}\;{{\unicode{x00B5}}}{{\rm{m}}^2}$. The measured insertion loss is less than 1.2 dB from 1520 nm to 1570 nm. To reduce the insertion loss, we further optimize the structure and design two mode converters that convert the TE0 mode into the TE1 mode and the TE2 mode with footprints of ${0.88} \times {2.3}\;{{\unicode{x00B5}}}{{\rm{m}}^2}$ and ${1.4} \times {2.4}\;{{\unicode{x00B5}}}{{\rm{m}}^2}$, respectively. Their measured insertion losses are both less than 0.5 dB. Additionally, the proposed devices are cascadable and scalable for high-order mode conversion.

中文翻译：

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基于介电插槽的超紧凑型硅模式阶转换器。

在绝缘体上硅平台上演示了具有介电槽的超紧凑型模序转换器。我们提出了一种模式转换器，该模式转换器将TE0模式转换为TE1模式，且占用空间仅为$ {0.8} \ times {1.2} \; {{\ unicode {x00B5}}} {{\ rm {m}} ^ 2} $。从1520 nm到1570 nm，测得的插入损耗小于1.2 dB。为了减少插入损耗，我们进一步优化了结构并设计了两个模式转换器，将TE0模式转换为TE1模式和TE2模式，占用空间为$ {0.88} \ times {2.3} \; {{\ unicode {x00B5} }} {{\ rm {m}} ^ 2} $和$ {1.4} \ times {2.4} \; {{\ unicode {x00B5}}} {{\ rm {m}} ^ 2} $， 分别。它们测得的插入损耗均小于0.5 dB。另外，提出的设备是可级联的和可扩展的，用于高阶模式转换。