Photoluminescence (PL) bands from potassium dihydrogen phosphate (KDP) crystals are studied by time-resolved PL spectroscopy. KDP crystals irradiated at a laser fluence of 11.5 J/cm2 are found to have the highest probability of phosphorus–oxygen hole center defects and the lowest probability of phosphorus-oxygen electric center defects, in contrast to the probabilities of these defects for KDP crystals irradiated at 9.0 J/cm2. The probabilities of these two defects occurring in retired components are found to be intermediate between those for crystals irradiated at the two different fluences. The two types of defects may result from two different mechanisms and may interconvert under certain conditions. Thus, there are differences between the defects in KDP crystals irradiated at a high laser fluence and those in retired components.

中文翻译：

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用光致发光光谱研究不同能量密度的激光照射 KDP 晶体的缺陷

通过时间分辨 PL 光谱研究来自磷酸二氢钾 (KDP) 晶体的光致发光 (PL) 带。发现以 11.5 J/cm2 的激光能量密度辐照的 KDP 晶体具有最高的磷-氧空穴中心缺陷概率和最低的磷-氧电中心缺陷概率，与这些缺陷对辐照的 KDP 晶体的概率形成对比。 9.0 焦耳/平方厘米。发现这两种缺陷出现在退役组件中的概率介于以两种不同能量密度辐照的晶体的概率之间。这两种类型的缺陷可能来自两种不同的机制，并且在某些条件下可能会相互转化。因此，在高激光能量密度照射下的 KDP 晶体中的缺陷与退役组件中的缺陷之间存在差异。