Noncontact band edge thermometry based on diffuse reflectance was used to monitor and control the substrate temperature rise during the MBE growth of niobium nitride transition metal nitrides on transparent, wide-bandgap silicon carbide substrates. Temperature transients as large as 135 °C are induced by changing the main substrate shutter state. The growth of niobium nitride films as thin as ∼5 nm leads to temperature increases as large as 240 °C. In addition, a temperature decrease during the growth of ultrawide-bandgap AlN films on niobium nitride was observed and characterized. The causes of the observed temperature excursions are explained by considering the Stefan–Boltzmann law, and ways to better control the substrate temperature are discussed.

中文翻译：

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透明 SiC 衬底上过渡金属氮化物外延过程中生长引起的温度变化

基于漫反射的非接触带边缘测温法用于监测和控制在透明宽带隙碳化硅衬底上的氮化铌过渡金属氮化物 MBE 生长过程中的衬底温升。通过改变主基板快门状态引起高达 135 °C 的温度瞬变。薄至 5 nm 的氮化铌薄膜的生长导致温度升高至 240 °C。此外，观察并表征了在氮化铌上生长超宽带隙 AlN 薄膜期间的温度下降。通过考虑 Stefan-Boltzmann 定律解释了观察到的温度偏移的原因，并讨论了更好地控制基板温度的方法。