Managing the interaction of materials with insertion layers and nonconventional molecular beam epitaxy growth conditions allows for interfaces that are more precise but requires judicious examination of the multiple possible design variables. Here, we show a comparison between As- and Sb-containing insertion layers between Al and two binaries with different group V elements and demonstrate that antimonide layers greatly improve the interface. In addition to depositing Al at extremely slow growth rates onto cold (below 0 °C) substrates, the reactivity is particularly minimized with AlSb insertion layers, which improves interface abruptness, preserves the underlying semiconductor layer’s crystalline properties, and produces flatter superconductor surfaces.

中文翻译：

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III-V 族半导体的铝金属化，用于研究邻近超导

管理材料与插入层和非常规分子束外延生长条件的相互作用允许更精确的界面，但需要对多种可能的设计变量进行明智的检查。在这里，我们展示了 Al 和具有不同 V 族元素的两种二元化合物之间的含 As 和 Sb 插入层之间的比较，并证明了锑化物层大大改善了界面。除了以极慢的生长速度将铝沉积到冷（0°C 以下）基板上之外，AlSb 插入层的反应性尤其最小化，这改善了界面突变，保持了下面的半导体层的结晶特性，并产生更平坦的超导体表面。