AlN/GaN double-barrier resonant tunnel diodes have been grown by rf-plasma assisted molecular beam epitaxy at temperatures between 760 and 860 °C on metalorganic chemical vapor deposition-grown GaN templates with sapphire substrates. Room temperature negative differential resistance (NDR) was observed for all samples despite the presence of higher densities of threading dislocations in the device layers than in the MOCVD GaN template. The fraction of devices exhibiting NDR and the peak-to-valley current ratio was small for each sample (typically 1%–10% and 1.003–1.1, respectively). A clear trend of increasing peak current density with increasing growth temperature was observed.

中文翻译：

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生长温度对蓝宝石上 MBE 生长的 AlN/GaN 谐振隧道二极管的电性能和微观结构的依赖性

AlN/GaN 双势垒谐振隧道二极管已通过 rf 等离子体辅助分子束外延在 760 至 860 °C 的温度下在金属有机化学气相沉积生长的 GaN 模板上生长，该模板具有蓝宝石衬底。尽管器件层中的穿透位错密度高于 MOCVD GaN 模板，但所有样品均观察到室温负微分电阻 (NDR)。对于每个样品，表现出 NDR 和峰谷电流比的器件比例很小（通常分别为 1%–10% 和 1.003–1.1）。观察到峰值电流密度随着生长温度的增加而增加的明显趋势。