Field emission scanning probe lithography (FE-SPL) is based on the exposure of a resist covered substrate with low energy electrons emitted from an ultra-sharp tip placed in close vicinity to a sample. GaN nanowires (NWs) present high mechanical stability, suitable geometry for FE-SPL, and controllable electrical properties achieved by adjusting dopant concentration. Here, the authors will present long time exposure results performed using GaN NWs tips, mounted on active scanning probes, working as field electron emitters. Using GaN NW tips, features down to the sub-10 nm were achieved in the FE-SPL process. A systematic study of the field emission current stability, exposure reproducibility, and results on exemplary high-resolution exposure and nanostructure imaging done with the same GaN tips will also be presented.

中文翻译：

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在有源悬臂梁上使用 GaN 纳米线进行场发射扫描探针光刻

场发射扫描探针光刻 (FE-SPL) 是基于光刻胶覆盖的基板与从放置在靠近样品的超锋利尖端发射的低能量电子的曝光。GaN 纳米线 (NW) 具有高机械稳定性、适合 FE-SPL 的几何形状以及通过调整掺杂剂浓度实现的可控电性能。在这里，作者将展示使用 GaN NW 尖端进行的长时间曝光结果，这些尖端安装在有源扫描探针上，用作场电子发射器。使用 GaN NW 尖端，在 FE-SPL 工艺中实现了低至 10 纳米以下的特征。还将介绍场发射电流稳定性、曝光再现性以及使用相同 GaN 尖端完成的示例性高分辨率曝光和纳米结构成像结果的系统研究。