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High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors
Journal of Vacuum Science & Technology B ( IF 1.4 ) Pub Date : 2020-05-01 , DOI: 10.1116/1.5135590
Patrick H. Carey 1 , Fan Ren 1 , Andrew M. Armstrong 2 , Brianna A. Klein 2 , Andrew A. Allerman 2 , Erica A. Douglas 2 , Albert G. Baca 2 , Stephen J. Pearton 3
Affiliation  

AlGaN polarization-doped field-effect transistors were characterized by DC and pulsed measurements from room temperature to 500 °C in ambient. DC current-voltage characteristics demonstrated only a 70% reduction in on-state current from 25 to 500 °C and full gate modulation, regardless of the operating temperature. Near ideal gate lag measurement was realized across the temperature range that is indicative of a high-quality substrate and sufficient surface passivation. The ability for operation at high temperature is enabled by the high Schottky barrier height from the Ni/Au gate contact, with values of 2.05 and 2.76 eV at 25 and 500 °C, respectively. The high barrier height due to the insulatorlike aluminum nitride layer leads to an ION/IOFF ratio of 1.5 × 109 and 6 × 103 at room temperature and 500 °C, respectively. Transmission electron microscopy was used to confirm the stability of the heterostructure even after an extended high-temperature operation with only minor interdiffusion of the Ni/Au Schottky contact. The use of refractory metals in all contacts will be key to ensure a stable extended high-temperature operation.

中文翻译:

AlGaN 梯度极化掺杂场效应晶体管在 500 °C 的高温下工作

AlGaN 极化掺杂场效应晶体管的特点是直流和脉冲测量从室温到 500 °C 的环境。直流电流-电压特性表明,无论工作温度如何,从 25°C 到 500°C 和全栅极调制,导通电流仅降低 70%。在整个温度范围内实现了接近理想的栅极滞后测量,这表明基板质量高且表面钝化充分。Ni/Au 栅极接触的高肖特基势垒高度支持在高温下运行,其值分别为 25 和 500 °C 时的 2.05 eV 和 2.76 eV。由于类似绝缘体的氮化铝层的高势垒高度导致室温和 500°C 下的 ION/IOFF 比分别为 1.5 × 109 和 6 × 103。透射电子显微镜用于确认异质结构的稳定性,即使在延长的高温操作之后,Ni/Au 肖特基接触只有很小的相互扩散。在所有触点中使用难熔金属将是确保稳定的长时间高温操作的关键。
更新日期:2020-05-01
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