The temperature dependences of the longitudinal and transverse conductivity of YВа2Сu3О7−δ single crystals irradiated with high-energy electrons were measured. It was found that, in contrast to unexposed YВа2Сu3О7−δ single crystals, the absolute value of the electrical resistivity anisotropy ρc/ρab significantly decreases with an increase in the number of structural defects in the experimental sample volume. The dependence ρc/ρab(Т) is well described both by the universal “1/2 law” and by the usual exponential expression for thermally activated conductivity.

中文翻译：

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高能电子辐照对YВа2Сu3О7−δ单晶超导跃迁和电阻率各向异性的影响

测量了用高能电子照射的 YВа2Сu3О7-δ 单晶的纵向和横向电导率的温度依赖性。发现，与未暴露的 YВа2Сu3О7−δ 单晶相比，电阻率各向异性 ρc/ρab 的绝对值随着实验样品体积中结构缺陷数量的增加而显着降低。ρc/ρab(Т) 的相关性可以通过普遍的“1/2 定律”和热激活传导率的常用指数表达式很好地描述。