Reconfigurable logic and neuromorphic devices are crucial for the development of high-performance computing. However, creating reconfigurable devices based on conventional complementary metal–oxide–semiconductor technology is challenging due to the limited field-effect characteristics of the fundamental silicon devices. Here we show that a homojunction device made from two-dimensional tungsten diselenide can exhibit diverse field-effect characteristics controlled by polarity combinations of the gate and drain voltage inputs. These electrically tunable devices can achieve reconfigurable multifunctional logic and neuromorphic capabilities. With the same logic circuit, we demonstrate a 2:1 multiplexer, D-latch and 1-bit full adder and subtractor. These functions exhibit a full-swing output voltage and the same supply and signal voltage, which suggests that the devices could be cascaded to create complex circuits. We also show that synaptic circuits based on only three homojunction devices can achieve reconfigurable spiking-timing-dependent plasticity and pulse-tunable synaptic potentiation or depression characteristics; the same function using complementary metal–oxide–semiconductor devices would require more than ten transistors.

可重构逻辑和神经形态设备对于高性能计算的发展至关重要。但是，由于基本硅器件的场效应特性有限，因此基于传统的互补金属氧化物半导体技术创建可重构器件具有挑战性。在这里，我们表明，由二维二硒化钨制成的同质结器件可以表现出受栅极和漏极电压输入的极性组合控制的各种场效应特性。这些电可调设备可以实现可重新配置的多功能逻辑和神经形态功能。使用相同的逻辑电路，我们演示了一个2：1多路复用器，D锁存器和1位全加法器和减法器。这些功能具有全摆幅输出电压以及相同的电源和信号电压，这表明可以将器件级联以创建复杂的电路。我们还表明，仅基于三个同质结器件的突触电路可以实现可重构的与时序相关的可塑性和脉冲可调的突触增强或抑制特性；使用互补金属氧化物半导体器件的相同功能将需要十个以上的晶体管。