ABSTRACT

Thermal transport in the microelectronic devices has been widely investigated to enhance its reliability. Within this context, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) represents the most used technology for electronic devices manufacturing. Due to its size reduction, the macroscopic model for MOSFET device requests some modifications for capturing thermal behavior within it. Hence, a precise mathematical model for phonon heat transport into transistors has become a key task for nano-electronics technology. The present work aims to investigate the ability of a mesoscale mathematical model for the heat conduction in a MOSFET at a Knudsen number of 10. The reported model was based on D₂Q₈ lattice Boltzmann model coupled with jump temperature boundary condition. The thermal source was supposed to be uniform along the MOSFET channel region. The temperature jump boundary condition was applied and treated by Lattice Boltzmann Method (LBM) in order to reveal the nature of the phonon-wall collisions lengthwise the channel. We have found that the behavior of the proposed model agrees with experimental results in terms of peak temperature rising. Furthermore, the maximum temperature in the interface (Si-SiO₂) is around 333 K. In addition, the results show that 30 ps is enough to reach the steady-state condition. The gained results indicate that the LBM joined with jump temperature condition provides accurate results and it can be employed for analyzing heat transfer phenomenon in microelectronic devices.

摘要

微电子器件中的热传输已被广泛研究以提高其可靠性。在此背景下，金属氧化物半导体场效应晶体管（MOSFET）代表了电子设备制造中最常用的技术。由于尺寸减小，MOSFET 器件的宏观模型需要进行一些修改才能捕获其内部的热行为。因此，声子热传输到晶体管的精确数学模型已成为纳米电子技术的关键任务。目前的工作旨在研究努森数为 10 时 MOSFET 热传导的介观数学模型的能力。所报告的模型基于 D ₂ Q ₈晶格玻尔兹曼模型与跳跃温度边界条件相结合。假设热源沿着 MOSFET 沟道区域是均匀的。采用格子玻尔兹曼方法（LBM）应用和处理温度跳跃边界条件，以揭示通道纵向声子壁碰撞的性质。我们发现所提出的模型的行为与峰值温度上升方面的实验结果一致。此外，界面的最高温度（Si-SiO ₂）约为 333 K。此外，结果表明 30 ps 足以达到稳态条件。所得结果表明，LBM结合跳跃温度条件提供了准确的结果，可用于分析微电子器件中的传热现象。