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Synthesis, growth and studies of pristine and nickel doped L-valinium picrate crystals for organic light emitting diodes applications
Materials Science-Poland ( IF 1.1 ) Pub Date : 2020-06-01 , DOI: 10.2478/msp-2020-0023
A. S. Ragunathan 1 , M. Selvapandiyan 1
Affiliation  

Abstract Single crystals of L-Valinium Picrate (LVP), 0.1 mol% Ni2+ doped L-Valinium Picrate, and 0.2 mol% Ni 2+ doped L-Valinium Picrate were grown by low temperature solution growth method, especially by solvent evaporation technique at ambient temperature. Function groups and modes of vibration were identified by FT-IR studies. The grown crystals belong to monoclinic system which has been revealed by powder XRD. The estimated band gaps were found to be 3.86 eV for LVP, 3.72 eV for 0.1 mol% Ni2+ doped LVP, and 3.70 eV for 0.2 mol% Ni2+ doped LVP crystals, respectively. The PL excitation wavelength of the grown materials is 370 nm. All the elements (C, N, O, Ni, and Cl) as per molecular formula were present in the EDAX spectrum of the grown materials. The 0.2 mol% Ni2+ ion doped LVP materials had higher thermal stability (208 °C) than LVP and 0.1 mol% Ni2+ doped LVP.

中文翻译:

用于有机发光二极管应用的原始和镍掺杂 L-苦味酸缬氨酸晶体的合成、生长和研究

摘要 采用低温溶液生长法,特别是通过溶剂蒸发技术在常温条件下生长 L-Valinium Picrate (LVP)、0.1 mol% Ni2+ 掺杂 L-Valinium Picrate 和 0.2 mol% Ni 2+ 掺杂 L-Valinium Picrate 单晶温度。通过 FT-IR 研究确定了功能组和振动模式。粉末XRD显示生长的晶体属于单斜晶系。发现估计的带隙对于 LVP 为 3.86 eV,对于 0.1 mol% Ni2+ 掺杂的 LVP 为 3.72 eV,对于 0.2 mol% Ni2+ 掺杂的 LVP 晶体为 3.70 eV。生长材料的 PL 激发波长为 370 nm。根据分子式的所有元素(C、N、O、Ni 和 Cl)都存在于生长材料的 EDAX 光谱中。0.2 mol% Ni2+ 离子掺杂的 LVP 材料具有比 LVP 和 0.
更新日期:2020-06-01
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