A simple micro-machined pressure sensor, based on the stress-impedance (SI) effect, was fabricated herein using typical micro-fabrication technologies. To sense pressure, a 1-µm thin, soft magnetic metallic film of FeSiB was sputtered and used as a diaphragm. Its electrical response (impedance change) was measured under pressure in a frequency band from 5 to 500 MHz. A lumped-element equivalent electric circuit was used to separate the impedance of the soft magnetic metal from other parasitic elements. The impedance change clearly depended on the applied pressure. It was also shown that the impedance change could be explained by a change in relative permeability, according to the theory of the SI effect. The radial stress in the diaphragm and the relative permeability exhibited a linear relationship. At a measurement frequency of 200 MHz, the largest sensor response, with a gauge factor of 385.7, was found. It was in the same order as the conventional sensors. As the proposed device is very simple, it has the potential for application as a cheap pressure sensor.

中文翻译：

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利用非晶软磁薄膜的应力阻抗效应测量压力的简单设备。

本文使用典型的微制造技术制造了一种基于应力阻抗（SI）效应的简单的微机械压力传感器。为了感应压力，溅射了1 µm的FeSiB软磁性金属薄膜，并将其用作隔膜。它的电响应（阻抗变化）是在5至500 MHz频段的压力下测量的。使用集总等效电路将软磁金属的阻抗与其他寄生元件分开。阻抗变化显然取决于所施加的压力。还表明，根据SI效应理论，阻抗变化可以用相对磁导率的变化来解释。隔膜中的径向应力与相对磁导率呈线性关系。在200 MHz的测量频率下，发现最大的传感器响应，具有385.7的规格系数。它的顺序与常规传感器相同。由于所提出的设备非常简单，因此有可能作为便宜的压力传感器应用。