A plasma probe and measuring method were developed to simultaneously determine both the electron density, n_e, and floating potential in plasma‐enhanced chemical vapor deposition (PECVD) coating processes within low‐pressure plasmas. The functionality of the probe with a high deposition rate is demonstrated on the basis of examples using hexamethyldisiloxane as a precursor gas. The results show that the developed probe can determine both the n_e (∼10¹⁵ m⁻³) and the time‐varying floating potential. The results also indicate that the probe is effective for monitoring the changes in the plasma condition caused by the pressure and the gas flow rate during the coating process. This method can contribute to confirm the process and chamber conditions in PECVD processes.

中文翻译：

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开发用于研究和控制等离子体增强化学气相沉积涂层工艺的新型等离子体探针

开发了一种等离子体探针和测量方法，可同时确定低压等离子体内等离子体增强化学气相沉积（PECVD）涂层工艺中的电子密度n _e和浮动电位。基于使用六甲基二硅氧烷作为前驱体气体的实例，证明了具有高沉积速率的探针的功能。结果表明，所开发的探头可以同时确定n _e（〜10 ¹⁵  m ^-3）和随时间变化的浮动电位。结果还表明，该探针可有效监测涂覆过程中压力和气体流速引起的等离子体状态变化。该方法可有助于确认PECVD工艺中的工艺和腔室条件。