Abstract In this letter, we propose two different methods to prepare monolayer MoO3 and MoOx by low-temperature inductively coupled plasma etching technology. The monolayer MoO3 is obtained by soft oxygen plasma oxidation of monolayer MoS2 due to the high specific surface area. The monolayer MoOx is prepared through plasma oxidation and atomic layer-by-layer etching of multilayer MoS2 due to the weak van der Waals interaction between the layers. It is proved that the prepared monolayer molybdenum oxide has good surface morphology and highly controllable components. The proposed process can precisely control the thickness of molybdenum oxide and has good uniformity and higher selectivity. This work could promote the application of atomically thin transition metal oxides in two-dimensional materials based electronic devices and its integration.

中文翻译：

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等离子体氧化和原子层蚀刻可控制备单层MoO3/MoO

摘要 在这封信中，我们提出了两种不同的方法，通过低温电感耦合等离子体蚀刻技术制备单层 MoO3 和 MoOx。由于高比表面积，单层 MoO3 是通过单层 MoS2 的软氧等离子体氧化获得的。由于层之间的弱范德华相互作用，通过等离子体氧化和多层MoS2的原子逐层蚀刻制备单层MoOx。证明所制备的单层钼氧化物具有良好的表面形貌和高度可控的成分。该工艺可以精确控制氧化钼的厚度，具有良好的均匀性和更高的选择性。这项工作可以促进原子级薄过渡金属氧化物在基于二维材料的电子器件及其集成中的应用。