Abstract

Gallium-nitride nanorods with a diameter of 15–40 nm and length of 50–150 nm are synthesized in monodisperse spherical mesoporous silica particles (MSMSPs) by high-temperature annealing of the Ga₂O₃ precursor in ammonia. The template material (a-SiO₂) is selectively removed by etching the composite MSMSP/GaN particles with HF to give individual GaN nanorods. It is shown that the size of the GaN nanorods substantially exceeds the pore size of the MSMSPs (diameter ~3 nm, length ~10 nm). A possible mechanism by which GaN nanorods are formed is proposed. Redistribution of the material within the composite MSMSP/GaN particles possibly occurs via the surface diffusion of gaseous molecules within mesopores and via the diffusion of Ga and N atoms in a-SiO₂.

中文翻译：

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单分散球形中孔二氧化硅颗粒中GaN纳米棒的形成

摘要

通过在氨中Ga ₂ O ₃前驱体进行高温退火，在单分散球形介孔二氧化硅颗粒（MSMSP）中合成了直径为15–40 nm，长度为50–150 nm的氮化镓纳米棒。模板材料（一-SiO ₂通过用HF蚀刻复合MSMSP / GaN颗粒有选择地去除），以得到单个的GaN纳米棒。结果表明，GaN纳米棒的尺寸大大超过了MSMSP的孔径（直径〜3 nm，长度〜10 nm）。提出了形成GaN纳米棒的可能机制。MSMSP / GaN复合粒子中材料的重新分布可能是由于中孔内气态分子的表面扩散以及a- SiO ₂中Ga和N原子的扩散所致。