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New design of mesoporous SiO2 combined In2O3-graphene semiconductor nanocomposite for highly effective and selective gas detection
Journal of Materials Science ( IF 4.5 ) Pub Date : 2020-06-15 , DOI: 10.1007/s10853-020-04928-5
Kamrun Nahar Fatema , Suresh Sagadevan , Yin Liu , Kwang Youn Cho , Chong-Hun Jung , Won-Chun Oh

We successfully prepared multiple gas sensing devices comprising of a thin-film sensor made with mesoporous silica combined In2O3-graphene semiconductor nanocomposite for sensing CO2, O2, and NH3. We demonstrated that our sensor had high selectivity for CO2 by recognizing O2 and NH3 in the vapor stage with accurate transformation into electrical signals in devices. The mesoporous semiconducting In2O3–GO–SiO2-10% (IGS10) sensor showed quick response/recovery times for detecting gases, including CO2, O2, and NH3. Compared to In2O3, In2O3–GO (IG), and In2O3–GO–SiO2-20% (IGS20), the mesoporous IGS10 showed superior gas sensing ability due to the implied optimum ratio of the synthesized sample. Finally, we proved a facile, low-cost route to attain the multiple gas sensing devices with the potential for vast application.

中文翻译:

用于高效和选择性气体检测的介孔 SiO2 结合 In2O3-石墨烯半导体纳米复合材料的新设计

我们成功地制备了多个气体传感装置,包括由介孔二氧化硅结合 In2O3-石墨烯半导体纳米复合材料制成的薄膜传感器,用于传感 CO2、O2 和 NH3。我们通过识别蒸气阶段中的 O2 和 NH3 并准确转换为设备中的电信号,证明了我们的传感器对 CO2 具有高选择性。介孔半导体 In2O3-GO-SiO2-10% (IGS10) 传感器显示出检测气体(包括 CO2、O2 和 NH3)的快速响应/恢复时间。与 In2O3、In2O3-GO (IG) 和 In2O3-GO-SiO2-20% (IGS20) 相比,介孔 IGS10 显示出优越的气敏能力,因为合成样品的最佳比例。最后,我们证明了一种简便、低成本的途径来获得具有广泛应用潜力的多种气体传感装置。
更新日期:2020-06-15
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