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Mechanism of reaction of silica and carbon for producing silicon carbide
Progress in Reaction Kinetics and Mechanism ( IF 0.7 ) Pub Date : 2019-12-04 , DOI: 10.1177/1468678319891416
Bahador Abolpour 1 , Rahim Shamsoddini 2
Affiliation  

The reaction kinetics of carbon reduction of silica were investigated using thermodynamic concepts and by fitting to relevant models the experimental data obtained for this reduction using a thermogravimetric unit in the temperature range of 1566 to 1933 K. The results show that the only way to produce SiC in this reduction is the reaction of Si, SiO, or SiO2 at the surface or by diffusion of SiO inside the carbon particles while CO and CO2 have no direct effect on the process. The controlling step of this reduction at temperatures lower than 1750 K is the chemical gas–solid or solid–solid reaction at the surface of the carbon particles, while at higher temperatures, the rate of SiO diffusing inside the carbon particles controls the rate of this reduction.

中文翻译:

二氧化硅与碳反应生成碳化硅的机理

使用热力学概念研究了二氧化硅碳还原的反应动力学,并通过将使用热重装置在 1566 至 1933 K 温度范围内为这种还原获得的实验数据拟合到相关模型。结果表明,生产 SiC 的唯一方法在这种还原中,Si、SiO 或 SiO2 在表面发生反应,或通过 SiO 在碳颗粒内部扩散而发生,而 CO 和 CO2 对过程没有直接影响。在低于 1750 K 的温度下,这种还原的控制步骤是碳颗粒表面的化学气-固或固-固反应,而在较高温度下,碳颗粒内部 SiO 扩散的速率控制着该反应的速率。减少。
更新日期:2019-12-04
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