Polycrystalline ultrathin 5 nm-thick n -type W-doped In 2 O 3 ( p -IWO) films with a significantly high Hall mobility ( μ H ) of 57.7 cm 2 (Vs) −1 were successfully fabricated by the under-vacuum solid-state crystallization of amorphous IWO ( a -IWO) films. a -IWO films with thicknesses ( t ) ranging from 5 to 50 nm were deposited on glass substrates without intentionally heating the substrates by reactive plasma deposition with direct current arc discharge. The source used for the film growth was a sintered In 2 O 3 pellet with a WO 3 content of 1.0 wt.% (corresponding to 0.6 at.%). We investigated the t dependence of the carrier transport mechanism of IWO films having the mean free paths of carrier electrons similar to t based on an empirical model with combined surface and interface scattering. The qualitative analysis of the relationship between μ

中文翻译：

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限制W掺杂In 2 O 3薄膜的载流子传输的因素

通过真空不足固体成功地制备了具有57.7 cm 2（Vs）-1的极高霍尔迁移率（μH）的5nm厚n型W掺杂In 2 O 3（p -IWO）多晶超薄膜。态IWO（a -IWO）薄膜的稳态结晶。在玻璃基板上沉积厚度（t）为5至50 nm的-IWO膜，而无意通过具有直流电弧放电的反应性等离子体沉积法有意加热基板。用于膜生长的源是WO 3含量为1.0重量％（相当于0.6原子％）的In 2 O 3烧结颗粒。我们基于结合了表面和界面散射的经验模型，研究了载流子电子的平均载流子自由度类似于t的IWO薄膜的载流子传输机制的t依赖性。