The origin of E3 electron traps at E C –0.58 eV in GaN was investigated using Si-doped n-type GaN layers grown on freestanding GaN substrates using MOVPE. These layers contained impurity Fe at various concentrations depending on the growth conditions and the position within the wafer. Twenty E3 concentrations ( N T,E3 ) determined by deep-level transient spectroscopy were plotted against the corresponding Fe concentrations ([Fe]) obtained from secondary ion mass spectrometry. A correlation was evident between N T,E3 and [Fe] in the range (0.4–12) × 10 15 cm –3 , suggesting that the E3 level in MOVPE-grown homoepitaxial GaN originates from the substitution of Fe atoms at Ga sites.

中文翻译：

---

通过与金属有机气相外延生长在GaN独立衬底上的n型GaN中的铁浓度相关联，确定EC –0.6 eV电子陷阱能级的起源

使用在MOVPE上生长在独立式GaN衬底上的Si掺杂n型GaN层，研究了GaN中EC –0.58 eV处E3电子陷阱的起源。这些层包含取决于生长条件和晶片内位置的各种浓度的杂质Fe。将通过深层瞬态光谱法测定的二十种E3浓度（NT，E3）与从二次离子质谱法获得的相应铁浓度（[Fe]）作图。NT，E3和[Fe]在（0.4-12）×10 15 cm –3范围内具有明显的相关性，这表明MOVPE生长的同质外延GaN中的E3水平源自Ga位上的Fe原子取代。