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Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template.
Optics Express ( IF 3.8 ) Pub Date : 2020-06-29 , DOI: 10.1364/oe.397164
Laura Monge-Bartolome , Tiphaine Cerba , Daniel A. Díaz-Thomas , Michaël Bahriz , Marta Rio Calvo , Guilhem Boissier , Thierry Baron , Jean-Baptiste Rodriguez , Laurent Cerutti , Eric Tournié

We report on 2.3-µm etched-cavity GaSb-based laser diodes (LDs) epitaxially integrated on on-axis (001)Si and benchmarked against their cleaved facet counterparts. The LDs were grown in two steps. First, a GaSb-on-Si template was grown by metal-organic vapor phase epitaxy (MOVPE) before the growth of the LD heterostructure by molecular-beam epitaxy. Different etched-facet geometries operate in continuous wave well above room temperature, and their performance are similar to those of cleaved-cavity LDs. These results show that etching mirrors is a viable route to form laser cavities in the GaSb technology and that MOVPE GaSb-on-Si templates are a suitable platform for optoelectronic devices overgrowth.

中文翻译:

MOVPE硅上GaSb硅模板上的蚀刻腔GaSb激光二极管。

我们报告了外延集成在同轴(001)Si上的2.3 µm蚀刻腔GaSb基激光二极管(LD),并以其劈开的小平面基准为基准。LDs分两步生长。首先,在通过分子束外延生长LD异质结构之前,通过金属有机气相外延(MOVPE)生长Si上GaSb-on模板。不同的刻面几何形状在远高于室温的连续波下工作,其性能与开腔LD相似。这些结果表明,蚀刻镜是在GaSb技术中形成激光腔的可行途径,并且MOVPE Si上GaSb硅模板是光电器件过度生长的合适平台。
更新日期:2020-07-06
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