Molybdenum (Mo) and tungsten (W) doping in copper vanadate (Cu₃V₂O₈) gives important insights into the modulation of carrier mobility and charge separation efficiency. Mo and W atoms have more valence electrons than vanadium(V), providing extra electrons to the host lattice of Cu₃V₂O₈ (CVO) resulting in raising the Fermi level wherein impurity energy levels will act as donors. Doped samples have shown current densities of ∼0.6 mA cm^–2, which is 3 times higher than that of pristine CVO, i.e., 0.18 mA cm^–2. Mo-doped CVO showed an excellent stability for 4 h with 6.8% loss in current density.

中文翻译：

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钒酸铜（Cu ₃ V ₂ O ₈）：（Mo，W）掺杂见解可增强作为光电化学水分解阳极的性能

钒酸铜（Cu ₃ V ₂ O ₈）中的钼（Mo）和钨（W）掺杂对调节载流子迁移率和电荷分离效率提供了重要的见识。Mo和W原子比钒（V）具有更多的价电子，为Cu ₃ V ₂ O ₈（CVO）的主晶格提供了额外的电子，从而导致费米能级提高，其中杂质能级将充当施主。掺杂样品的电流密度约为0.6 mA cm ^-2，是原始CVO的电流密度（0.18 mA cm ^-2）的3倍。钼掺杂的CVO在4小时内表现出出色的稳定性，电流密度损失了6.8％。