The presence of high dielectric material between the metal and semiconductor interface played a significant role in many electronic device applications. In this work, we have fabricated Al/p-Si Schottky barrier diode by introducing nanostructured HfO₂ films as a middle layer with different substrate temperatures via JNSP technique. XRD analysis revealed significant phase change from amorphous to monoclinic phase while increasing substrate temperature. Through FESEM images, a porous structure and irregular sphere-like grains were observed. The optical energy band gap of the HfO₂ films has found to vary from 3.41 to 3.73 eV respectively. From I–V characterization, the obtained diode ideality factor was found to be decreasing and their corresponding barrier height increased with respect to substrate temperature. Particularly, the diode fabricated at 600 °C exhibited better ideality factor value (n = 3.4). We observed that the presence of highly dielectric films strongly improved the diode parameters, especially at high substrate temperature.

在金属和半导体界面之间存在高介电材料在许多电子设备应用中发挥了重要作用。在这项工作中，我们通过JNSP技术通过引入纳米结构化的HfO ₂膜作为具有不同衬底温度的中间层，从而制造了Al / p-Si肖特基势垒二极管。XRD分析显示出从非晶相到单斜晶相的显着相变，同时提高了衬底温度。通过FESEM图像，观察到多孔结构和不规则球形颗粒。HfO _2的光能带隙薄膜已发现分别从3.41到3.73 eV不等。从IV特性分析，发现相对于衬底温度，所获得的二极管理想因子减小，并且其相应的势垒高度增加。特别是，在600°C下制造的二极管表现出更好的理想因子值（n = 3.4）。我们观察到，高介电常数薄膜的存在极大地改善了二极管参数，尤其是在高基板温度下。