A cryogenic investigation of the Kink effect with drain-source bias sweeping process during output characteristics is suggested. An exhaustive study of the field effect dependence on the emission rate from hole traps in AlGaN/GaN HEMT transistors has been realized by means of current DLTS spectroscopy (I-DLTS). We have found that the Kink effect was induced by impact ionization of electron trapped in acceptor-like deep levels with activation energies at about 0.85 eV overhead the valence band of the GaN buffer layer. Using I-DLTS method, three holes traps, labeled A, H1, and H5, have been distinguished. The H1 deep level might correspond to the carbon substituting the N site (CN) which is supposed to be the main cause of the Kink effect. The major H5 trap seems to be gallium vacancy complex (VGa–ON). For the hole trap H1, the phonon-assisted tunneling emission is the dominant mechanism for holes to escape from the trapping centers while for the H5 trap their field dependence shows a classical pure tunneling effect.

中文翻译：

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电流DLTS在Al0.22Ga0.78N/GaN/SiC HEMTs中通过H1空穴陷阱的扭结效应与俘获机制的相关性：场效应增强

建议在输出特性期间使用漏源偏置扫描过程对扭结效应进行低温研究。场效应依赖于 AlGaN/GaN HEMT 晶体管中空穴陷阱的发射率的详尽研究已经通过当前的 DLTS 光谱 (I-DLTS) 实现。我们发现扭结效应是由俘获在类受体深能级中的电子碰撞电离引起的，激活能在 GaN 缓冲层的价带上方约 0.85 eV。使用 I-DLTS 方法，已经区分了标记为 A、H1 和 H5 的三个孔陷阱。H1 深能级可能对应于碳取代 N 位点 (CN)，这被认为是导致扭结效应的主要原因。主要的 H5 陷阱似乎是镓空位复合物 (VGA-ON)。对于空穴陷阱 H1，